, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfm10n12, rfm10n15, RFP10N12, rfp10n15 n-channel enhancement-mode power field-effect transistors 10 a, 120v?150v ros(on): 0.3 o features: ? so/4 is power-dissipation limited m nanosecond switching speeds m linear transfer characteristics m high input impedance m majority carrier device n-channel enhancement mode terminal designations the rfm10n12 and rfm10n1s and the'RFP10N12 and rfp10n15* are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. these types can be operated directly from integrated circuits. the rfm-lypes are supplied in the jedec to-204aa steel package and the rfp-types in the jedec to-220ab plastic package. rfm10n12 rfm10n15 gate jedec to-204aa hfp10n12 rfp10n1s drain flange)-* f0" .._?_. = >- l~ 1 ? ? top view jedec to-220ab maximum ratings, absolute-maximum values (tc=zs c): rfm10n12 rfm10n15 drain-source voltage vms drain-gate voltage (r^l mf5) ... vkm gate-source voltage vra drain current, rms continuous id pulsed lou power dissipation @ tc=2s'c pt derate above tc-25c operating and storage temperature t,, t? 120 120 76 0.6 150 150 75 0.6 20 10 25 -55 to+150 RFP10N12 120 120 60 0.48 rfp10n15 1so 150 60 0.48 v v v a a w wrc ?c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfm10n12, rfm10n15, RFP10N12, rfp10n15 electrical characteristics at case temperature (tc) = 25 c unless otherwise specified characteristics drain-source breakdown voltage gate threshold voltage zero gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductanee input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal resistance junction-to-case symbol bvoss vasuiu loss loss vos(on)' ros(on)' 9..' c{u com cn? td(on) t, woff) 1i rffjc test conditions id = 1 ma vos = 0 vfls = vm id = 2 ma vos = 100 v vm = 120v tc= 125 c vos = 100 v vds.= 120v vas = 20 v vds = o id = 5 a vas = 10 v id = 10 a vas = 10 v id = 5 a vas = 10 v vos = 10 v in = 5 a v[>s=25 v v05 = 0 v f = 1mhz, vud=75 v lo = 5 a r,.n = r0, = 50 n vos = 10 v rfm10n12, rfm10n15 RFP10N12, rfp10n15 limits rfm10n12 RFP10N12 min. 120 2 - . - - - - - 2 - 40(typ.) 165(typ.) 90(typ.) 90(typ.) - - max. -. 4 1 50 100 1.6 4 0.3 - 650 230 60 60 250 135 135 1.67 2,083 rfm10n15 rfp10n15 min. 150 2 : - - - ? - 2 ? 40(typ.) 165(typ.) 90{(yp.) 90(typ.) - - max. - 4 1 50 100 1.5 4 0,3 - 650 230 60 60 250 135 135 1.67 2.083 units v v m na v n mho pf ns ?c/w 'pulsed: pulse duration = 300 pa max.. duty cycle = 2%. source-drain diode ratings and characteristics characteristic diode forward voltage reverse recovery time symbol v5n t. test conditions lso*5 a if=4a dif/dt=100a//js limits rfm10n12 RFP10N12 min. ? max. 1.4 200(typ) rfm10n15 rfp10n15 min. ? max. 1.4 200(typ) units v ns
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